Abstract
Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.
Highlights
The systematic sensitivity-based analysis at the selected bias voltages is accomplished plished using the dimensionless relative sensitivity of each parameter (RSP) with respect using the dimensionless relative sensitivity of each parameter (RSP) with respect to Ta, to Ta, which is calculated by normalizing the relative change in P to the relative change in which is calculated by normalizing the relative change in P to the relative change in Ta : Ta: RSP
The remainderofofthis this section is divided intosubsections: two subsections: part is foon the impact of the ambient temperature on the DC characteristics, whereas the second cused on the impact of the ambient temperature on the DC characteristics, whereas the part is dedicated to the effects of the variations in the ambient temperature on the micro‐
We have reported an experimental investigation on the impact of the ambient tem‐
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. Throughout the years, many studies have been dedicated to the investigation of how the temperature impacts the performance of GaNbased HEMT devices To this end, both electro-thermal simulations [1–6] and measurementbased analysis [7–26] have been developed. To gain a comprehensive insight, the present article focuses on the impact of the ambient temperature (Ta ) on the behavior of an on-wafer GaN HEMT using DC and Micromachines 2021, 12, 549. Analysis, one to assess oftemperature the variation in the tions by sensitivity-based both cooling and heating theenabling device, spanning the −40the °C impact to 150 °C ambient temperature transistor performance.extraction. DUT [15] by developing a analysis, enabling one to assess the impact of thefocused variation thesame ambient temperature on sensitivity-based analysis, enabling quantitative and investigation the transistor performance. The metal organic chemical vapor deposition (MOCVD) technique is used to grow the
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