Abstract
Focused helium ion beam (FHIB) can provide a higher resolution fabrication for nanostructures processing due to its unique mechanism. To calculate the damage of the substrate and determine the process parameters of FHIB quantitatively, an experiment based damage profile function (DPF) for the FHIB incident on substrate is proposed. In this study, a genetic algorithm (GA) is introduced to calibrate coefficients of DPF based on the characterization of amorphous region profiles from a few typical experiments. The experiment results of amorphous region profiles are well consistent with results calculated by the DPF applied in FHIB processing in a wide range of incident ion dose.
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