Abstract
A two-dimensional (2D) Si film can form between a graphene overlayer and a Ru(0001) substrate through an intercalation process. At the graphene/2D-Si/Ru(0001) surface, the topmost graphene layer is decoupled from the Ru substrate and becomes quasi-freestanding. The interfacial Si layers show high stability due to the protection from the graphene cover. Surface science measurements indicate that the surface Si atoms can penetrate through the graphene lattice, and density functional theory calculations suggest a Si-C exchange mechanism facilitates the penetration of Si at mild temperatures. The new mechanism may be involved for other elements on graphene, if they can bond strongly with carbon. This finding opens a new route to form 2D interfacial layers between graphene and substrates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.