Abstract
An evaluation of Ti-based gate metals (Ti, TiN, and TiB 2 ) on Hf-silicate gate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated by taking an interface layer and interface charge into consideration, were 4.27, 4.56, and 5.08 eV for Ti, TiN, and TiB 2 , respectively. Regardless of gate electrodes, the conduction mechanism of the samples was fitted with the Poole-Frenkel model, which is related to oxygen vacancies in the film. A Ti gate electrode was found to be more favorable for n-channel metal oxide semiconductor (MOS) devices, and TiB 2 gate electrode can be used for p-channel MOS devices with Hf-silicate dielectrics.
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