Abstract
An approach to evaluating the sensitivity parameters, namely, sections of single event effects in the linear loss energy transfer function, using a charge collection model by a point sensitive area is proposed. The presented model satisfactorily describes the experimental results based on changes of sections of single event effects on the linear energy transfer and allows one to relatively simply take into account angular dependences for incident ions. The approach for the evaluation of the sensitivity of integrated circuits to the effects of multiple bit upsets is proposed.
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