Abstract

This paper will present an initial evaluation of the lead zirconate-lead zinc niobate solid solution for use in nonvolatile ferroelectric memory devices. Previous work has shown that the (x)/spl middot/PbZrO/sub 3/-(1-x)/spl middot/Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/ [PZZN] system has square hysteresis loops accompanied by large remnant polarizations. In particular, compositions near the room temperature antiferroelectric to ferroelectric phase boundary will be investigated.

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