Abstract
Secco etchant was conventionally used for delineation of flow pattern defects (FPDs) in lightly-doped Czochralski (Cz) silicon wafers. However, the FPDs in heavily doped n-type silicon wafers cannot be well delineated by Secco etchant. Herein, an etchant based on CrO3-HF-H2O system, with an optimized volume ratio of V(CrO3): V(HF)=1:1, where the concentration of CrO3 is 0.25 M, has been developed for delineation of FPDs with well-defined morphologies for the heavily As- or P-doped n-type silicon wafers.
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