Abstract
In this paper, we propose a double diode network including an additional stacked diode, which provides robustness against Electrostatic discharge (ESD) and high-frequency interference signals. The proposed stacked diode in the conventional double diode network protects the integrated circuit from instantaneous voltage events by providing an additional current path to the double diode network. Also, it can structurally minimize the parasitic capacitance generated in the diode. The general operating principle and limitation of the conventional double diode network for ESD events and high-frequency interference signals were analyzed and simulated. For experimental verification, a cascode LNA with inductive source degeneration was designed in a 130nm CMOS Silicon-on-insulator (SOI) process for the time-division long-term evolution (TD-LTE) application at the coexistence band. The LNA with the proposed double diode network provides a noise figure of 1.08 dB and a small-signal gain of 18.7 dB at 2.65 GHz (Band 41). And it was measured to be able to protect the internal circuit at 2000 V HBM event, and the RF performances were not affected even with a high-frequency interference signal close to 30 dBm.
Highlights
Wireless mobile communication has been rapidly evolving into the fifth-generation (5G) system in response to the increase in user data traffic such as 2G/3G /4G-LTE and the demand for high-speed quality data transmission
The low-noise amplifier (LNA) current after Electrostatic discharge (ESD) pulse zapping of each mode is compared with the current before ESD pulse zapping to verify any current changes which indicates that the ESD protection circuit is failed at the ESD stress level
This level means that there is no current change in the 2 kV human body model (HBM) measurement as a slight change that can change due to environmental conditions according to the measurement
Summary
Wireless mobile communication has been rapidly evolving into the fifth-generation (5G) system in response to the increase in user data traffic such as 2G/3G /4G-LTE and the demand for high-speed quality data transmission. We propose a new double diode network with a stacked diode that can protect from the ESD events and the interference signals.
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