Abstract
The results of electron paramagnetic resonance (EPR) study of obliquely deposited porous SiOx films before and after thermal annealing in vacuum at 950°C are presented. The low intensity slightly asymmetrical and featureless EPR line with a g-value of 2.0044 and a linewidth of 0.77mT has been detected in as-sputtered films and attributed to dangling bonds of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense EPR line with g=2.0025, linewidth of 0.11mT and a hyperfine doublet with 1.6mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over four non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the defect system is discussed.
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