Abstract
An energy-efficient ${Ka}$ / ${Q}$ dual-band power amplifier (PA) is proposed using 0.1- $\mu \text{m}$ GaAs pseudomorphic high-electron mobility transistor process in this letter. The PA consists of two stages, and its high efficiency is enhanced by employing a low-loss dual-band output matching network, and adopting different supply voltages for the driver stage and the output stage. Owing to the proposed matching circuits, the PA achieves a measured small signal gain of 19.3 and 15.5 dB, output power of 22.5 and 22.7 dBm, and peak power-added efficiency of 38% and 40% at 29.5 and 47 GHz, respectively. To our best knowledge, this is the state-of-the-art high efficiency dual-band PA operating at ${Ka}$ -band and ${Q}$ -band.
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