Abstract
ABSTRACTBy taking the moments of the coupled Boltzmann transport equations for electrons and phonons, an extended hydrodynamic model describing the electron transport in silicon carbide semiconductors has been obtained. This model is coupled with the heating of the crystal lattice. All the transport coefficients and the constitutive equations are determined by using the maximum entropy principle of extended thermodynamics. By using this model with a suitable limit, thermoelectric effects in silicon carbide devices are investigated.
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