Abstract
This paper presents a novel approach for the modeling of noise behavior of III-V compound semiconductor based HBT’s over a wide frequency range. The main advantage is that the proposed model is based on two individual un-correlated noise sources, and easy to be incorporated with commercial circuit simulation software. The model is verified by measurements of the four noise parameters of an InP HBT up to 20 GHz and a GaAs HBT up to 26 GHz. The good agreements have been obtained.
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