Abstract
A purely electronic model of photoinduced optical anisotropy in glassy semiconductors is formulated. The model is based on the concept of geminate electron-hole pairs captured by correlated deep traps. The kinetics of photoinduced anisotropy are controlled by the photogeneration, trapping and recombination of geminate pairs. Predictions of the model are shown to be in agreement with experimentally observed basic characteristic features of photoinduced anisotropy.
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