Abstract
The lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots (QDs)is investigated. Photoresponse in the range of 1.2–0.3 eV related to the optical transitionsbetween QD hole levels and Si electron states is observed. It is shown that the maincontribution to the lateral photoconductivity is made by the electron states localized in theSi band bending region. Application of a ‘quantum box’ model for the description of QDhole levels allows us to clear up the nature of peaks observed in the photoconductivityspectrum. A detailed energy scheme of the Ge/Si structures with Ge QDs is built up.
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