Abstract
We have compared the generation of radiation-induced Pb (‘‘trivalent silicon’’) centers at the Si/SiO2 interface with the radiation-induced buildup of interface states. We observe a strong correlation between the density of Pb centers and radiation-induced interface state density (Dit) and similar annealing behavior of radiation-induced Pb and Dit. Furthermore, the Pb resonance intensity is strongly bias dependent; this indicates that the charge state of the Pb defect is bias dependent. We conclude that Pb defects account for a very large portion of radiation-induced interface states.
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