Abstract
Summary form only given. The electron spin resonance (ESR) measurements show the presence of an orientation-dependent resonance near g=2.005. Preliminary ESR measurements indicate quite strongly that the resonance is primarily due to a (rather low) density of P/sub bo/ centers. The P/sub bo/ center is a trivalent silicon defect at a Si/SiO/sub 2/ interface with an unpaired electron in an approximately sp/sup 3/ hybridized orbital pointing out into the oxide. The P/sub b/ centers are interface-state defects with two levels in the silicon band gap. The ESR results must be viewed as preliminary in nature. They do however, indicate that these SOI structures exhibit relatively low defect densities. ESR results obtained in SIMOX (separation by implantation of oxygen) SIMOX and ISE (isolated silicon epitaxy) SOI structures are compared and etchback studies are used to determine whether or not other dangling bond centers may be present in the ISE silicon. >
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