Abstract
An electron microscopy study has been performed on the microstructure of (1 0 0)CdTe epitaxial layers, which were grown upon a 4°-off (1 0 0)GaAs substrate by metalorganic chemical vapor deposition. The surface of the epitaxial layer is covered with a large number of elongated pyramidal hillocks along the [0 1 1̄] direction. Their surface density is about 7×10 6/cm 2 and they have various sizes within 2.5 μm×6.5 μm. The hillocks are built up by the propagation of planar defects. Growth-mediated planar defects are responsible for the formation of elongated pyramidal hillocks in relation to the anisotropic distribution of planar defects: planar defects propagated by the growth mechanism are found particularly along the [0 1 1̄] direction. In addition, because the generation of growth-mediated planar defects through deposition errors occurs at any place as well as on substrate surface irregularities, hillocks can have various sizes.
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