Abstract
A T.E.M. investigation was carried out to study the segregation of arsenic in silicon and the resulting substructure. Two doping methods, arsenic implantation and capsule diffusion, were used. After annealing at 700°C two modes of segregation were observed. In the case of arsenic implanted silicon, rod-shaped precipitates of As-Si are formed along {110} planes. In the case of arsenic diffused silicon the observed results suggest that segregation of arsenic is associated firstly with faulting on {111} planes and secondly with the generation of perfect a 2 〈110〉 extrinsic dislocation loops. It is postulated that the difference in segregation mechanism can be attributed to radiation damage centers in implanted silicon.
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