Abstract
A simple electrochemical model for gaseous oxidation is derived and applied to the oxidation of zirconium at 700°C. It is concluded that the part of reaction involving electron transport is rate‐controlling. The factor determining the difficulty of ion transport has not been identified; passage through the oxide film does not seem to be limiting. Half‐cell potentials for oxidation and reduction have been calculated to be approximately equal. Some variation in the oxide film defect structure with oxidation time has been deduced. Details are lacking.
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