Abstract
The emergence of memristor technologies brings new prospects for modern electronics via enabling novel in-memory computing solutions and energy-efficient and scalable reconfigurable hardware implementations. Several competing memristor technologies have been presented with each bearing distinct performance metrics across multi-bit memory capacity, low-power operation, endurance, retention and stability. Application needs however are constantly driving the push towards higher performance, which necessitates the introduction of a standard benchmarking procedure for fair evaluation across distinct key metrics. Here we present an electrical characterisation methodology that amalgamates several testing protocols in an appropriate sequence adapted for memristors benchmarking needs, in a technology-agnostic manner. Our approach is designed to extract information on all aspects of device behaviour, ranging from deciphering underlying physical mechanisms to assessing different aspects of electrical performance and even generating data-driven device-specific models. Importantly, it relies solely on standard electrical characterisation instrumentation that is accessible in most electronics laboratories and can thus serve as an independent tool for understanding and designing new memristive device technologies.
Highlights
Emerging memory-resistive devices, known as memristors[1], have exhibited an unmatched potential for a broad range of applications ranging from non-volatile memories[2] to neuromorphic computing[3,4] and reconfigurable circuits[5,6]
We evaluate the stability of the Device Under Test (DUT) in its given resistive state evaluating the existence of volatile dynamics
After the resistive states of the device have been identified, several retention steps across a series of these states can inform us of their stability as well as the DUT’s ability to retain the observed memory window that defines the dynamic range of switching
Summary
Emerging memory-resistive devices, known as memristors[1], have exhibited an unmatched potential for a broad range of applications ranging from non-volatile memories[2] to neuromorphic computing[3,4] and reconfigurable circuits[5,6]. Www.nature.com/scientificreports is concluded with temperature dependent voltage cycling that can provide insights into the conduction mechanisms governing the switching in the DUT.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
