Abstract

Graphene as a truly 2-dimensional (2D) system is a promising candidate material for various optoelectronic applications. Implementing graphene as the main building material in ultra-broadband photodetectors has been the center of extensive research due to its unique absorption spectrum which covers most of the electro-magnetic spectra. However, one of the main challenges facing the wide application of pure graphene photodetectors has been the small optical absorption of monolayer graphene. Although novel designs were proposed to overcome this drawback, they often need complicated fabrication processes in order to integrate with the graphene photodetector. In this regard, fabrication of purely graphene photodetectors is a promising approach towards the manufacturing of simple, inexpensive, and high photosensitive devices. The fabrication of full graphene photodetectors (FGPDs) is mainly based on obtaining an optimal technique for the growth of high quality graphene, modification of electronic and optical properties of the graphene, appropriate techniques for transfer of graphene from the grown substrate to the desire position, and a proper design for photodetection. Therefore, the available states of the art techniques for each step of device fabrication, along with their pros and cons, are reviewed and the possible approaches for optimization of FGPDs have been proposed.

Highlights

  • IntroductionPhotonic Sensors fabrication of full graphene photodetectors (FGPDs) from the perspectives of graphene growth methods, the transfer techniques of graphene, photodetection mechanism in graphene based devices, and the modifications that have been proposed for fabrication and optimization of FGPD devices

  • As an exotic 2-dimansional (2D) material, graphene is an attractive material for future optoelectronic devices due to its excellent electronic and optical properties, such as variety of transport phenomena that are characteristics of 2D Dirac fermions, near-ballistic transport at room temperature, bipolarity, high purity, high mobility, high critical current density, linear dispersion of the Dirac electrons, and saturable absorption [1 7]

  • We highlighted the most advances in fabrication of full graphene devices for photodetection applications

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Summary

Introduction

Photonic Sensors fabrication of full graphene photodetectors (FGPDs) from the perspectives of graphene growth methods, the transfer techniques of graphene, photodetection mechanism in graphene based devices, and the modifications that have been proposed for fabrication and optimization of FGPD devices. These findings offer insightful information to achieve high performance FGPD via process optimization

A brief introduction and properties of graphene
Preparation techniques
Wet exfoliation
Chemical Vapor Deposition (CVD)
Physical vapor deposition
Epitaxial growth on silicon carbide substrate
Graphene transfer techniques
Photodetectors
Graphene photodetectors and photo-detection mechanisms
Objective lens
Graphene-semiconductor hetero-junction photodetector (GSHP)
Hybrid photodetectors
Full graphene photodetectors
80 GNR with C60
Findings
Conclusions and perspective

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