Abstract
Abstract Highly active ZnS-UV was obtained in situ from ZnS(en)0.5 hybrid during the hydrogen formation using a methanol–water solution under UV irradiation. X-ray diffraction patterns and UV spectroscopy for both ZnS-UV and ZnS-400 obtained from the calcination of the ZnS(en)0.5 hybrid showed similar structural and photophysical properties; however, the efficiency of the ZnS-UV semiconductor was 7 times higher (4825 μmol h−1 g−1) compared to the ZnS-400. The highest H2 production was obtained using a UV lamp of very low intensity (2.2 mW cm−1) and it is attributed to a quantum size effect caused by the slow elimination of ethylenediamine (en) in the structural ZnS layer during the UV irradiation.
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