Abstract
Despite their growing adoption in a variety of applications, SiC MOSFETs are generally not available at high current rating. Therefore, there is a high demand for power modules exploiting configurations based on parallel devices. However, these products still need optimization in order to ensure long-term reliability. This paper presents a methodology relying on fast electrothermal simulations aimed at aiding this optimization procedure. The proposed approach is applied to a power module in which the parallel MOSFETs are realistically subject to mismatched parameters.
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