Abstract
This paper presents a nonlocal model for channel hot electron injection in MOSFETs and nonvolatile memories, which includes a full-band description of optical phonon scattering rates and carrier group velocity. By virtue of its efficient formalism, this model can also include carrier-carrier scattering, which has a marked impact on gate current at low gate voltages. The model is compared against full-band Monte Carlo simulations of typical nor flash devices in terms of distribution functions, bulk current, gate current, and gate current density along the channel. A very good agreement is obtained for various drain and gate voltages and channel lengths.
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