Abstract
In this paper, we present the design of a high-frequency (HF) rectifier implemented in a 0.5-μm 3M/2P 5V standard CMOS process for wireless power transmission across short-range inductive links. The rectifier has been optimized for 13.56 MHz ISM band, and achieves power conversion efficiency (PCE) of ~83% and voltage conversion ratio > 92% in post-layout simulations. We have successfully incorporated a dual-mode back-telemetry capability in this rectifier with little area or efficiency overhead, which tolerates wide load-fluctuations at the secondary side. With these improvements, this active back-telemetry rectifier (ABTR) is geared towards increasing the overall system efficiency, data transfer rate, and reading range in applications such as implantable microelectronic devices (IMD) and radio frequency identification (RFID).
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