Abstract
The formation of intermetallic compound (IMC) on the sidewall of Cu-pillar microbumps brings potential reliability threats. To inhibit its formation, a thin CuO layer was fabricated on the sidewall of Cu pillars by thermal oxidation first. Then, we verified that the CuO layer effectively retarded Sn–Ag solder sidewall wetting in the reflow process and exhibited a strong inhibition effect on Cu–Sn IMCs formation on the sidewall of microbumps during aging process. Secondly, microstructural evolution of copper oxides layer during aging was discussed studied. Results showed that the initial simple CuO layer became complex as Cu2O/CuO, fully covered the whole solder cap and formed a continuous reticulation structure on the polyimide layer after 2000 h aging. Then, the formation mechanism of copper oxides layer was proposed according to its oxidation kinetics. The growth behaviors of copper oxides layer around microbumps and its inhibition ability of IMC growth on the sidewall of microbumps are of great importance to electronics reliability.
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