Abstract
An electron beam lithography system designed for making structures with dimensions in the range 100 to 1000 Å is described. The beam diameter is 10 Å and the maximum beam energy is 100 keV. The system is calibrated for resist exposure by measuring the beam size and current after magnifying it with projector lenses. The beam is deflected electromagnetically under computer control and vector scanning is used during lithography. The system has been used to make fine lines and grids with linewidths in the range 150 to 500 Å. Relatively dense structures with large ratios of resist thickness to linewidth have been demonstrated on both thick and thin electron-transparent, silicon substrates with the system operated at 50 keV. Results have been obtained on both single layer crosslinked resists and double layers of crosslinked resists and PMMA. It is concluded that finer lines and more densely packed structures over larger areas can be obtained on solid substrates using 100 keV beam energy.
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