Abstract

A low-power, low-noise, and high-bandwidth magnetometer that utilizes the magnetoimpedance (MI) element as a sensor head is presented. The MI element has a high sensitivity, and it can be implemented in the mm-scale through the MEMS process. The analog front-end (AFE) circuit of the magnetometer includes a digital calibration scheme that automatically enhances the loop gain of the system, resulting in high bandwidth and low-noise characteristics. The AFE circuit is designed based on a switched-capacitor (SC) approach, and its dedicated switching scheme can suppress the folded noise of an amplifier. A single-coil magnetic negative feedback architecture with correlated double sampling (CDS) enables to achieve a high dynamic range (DR) and stable passband gain in addition to simplifying the structure of the MI element. The AFE chip of the magnetometer is implemented in a 0.18- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS process, and it achieves an 8-pT/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\surd $ </tex-math></inline-formula> Hz noise floor within a 31-kHz bandwidth and the DR of 96 dB, where the power consumption is 1.97 mW.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call