Abstract
An asymmetric sampled Bragg grating (SBG) semiconductor laser, which consists of two sections with same length but different sampling duty cycle, can be introduced an arbitrary equivalent-phase-shift (EPS) into its center. At the same time, to adjust the sampling duty cycles in the two sections as different magnitude, the studied laser can output more lasing power from its one facet than that from the other one. That is to say, this method can be used to design and fabricate the EPS SBG semiconductor laser with higher output efficiency.
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