Abstract
Metal-oxide semiconductors have attracted considerable attention as next-generation circuitry for displays and energy devices because of their unique transparency and high performance. We propose a simple, novel and inexpensive ‘aqueous route’ for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, <200 °C). These results provide substantial progress toward solution-processed metal-oxide TFTs through naturally formed, unique indium complex and post annealing. The fabricated TFTs exhibited acceptable electrical performance with good large-area uniformity at low temperatures. Additional vacuum annealing facilitated the condensation reaction by effectively removing byproduct water molecules and resulted in the activation of the In2O3 TFT at low annealing temperatures, even temperatures as low as 100 °C. In addition, we have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress.
Highlights
Metal-oxide semiconductors (MOSs) are a unique class of materials that have both transparency and electronic conductivity.[1,2,3] Increasing demand for transparent semiconducting active materials has resulted in increased attention on the MOSs for next-generation electronics, including electronics for use in high-performance, flexible and transparent applications, because of their favorable field-effect mobility, high optical transparency and good environmental stability.[4,5] In the early studies, these materials were primarily prepared using a vacuum process.[6,7] the vacuum-based deposition method has advantages, the high fabrication cost and large-area device uniformity restrict its areas of application
The water behaves as a solvent with a high static dielectric constant, which favors the dissociation of ionic species and acts as a s-donor molecule that reacts as a nucleophilic ligand.[19]
The peak observed at 720 cm À1 is attributed to free nitrate ions, which do not participate in the formation of the complex
Summary
Metal-oxide semiconductors (MOSs) are a unique class of materials that have both transparency and electronic conductivity.[1,2,3] Increasing demand for transparent semiconducting active materials has resulted in increased attention on the MOSs for next-generation electronics, including electronics for use in high-performance, flexible and transparent applications, because of their favorable field-effect mobility, high optical transparency and good environmental stability.[4,5] In the early studies, these materials were primarily prepared using a vacuum process.[6,7] the vacuum-based deposition method has advantages, the high fabrication cost and large-area device uniformity restrict its areas of application. We suggest a simple and novel ‘aqueous route’ for the fabrication of oxide thin-film transistors (TFTs) at low annealing temperatures (that is, o200 1C). We have demonstrated that the flexible and transparent oxide TFTs on plastic substrates exhibit good resistance to external gate bias stress
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