Abstract
physica status solidi (a)Volume 82, Issue 2 p. K145-K148 Defects, Atomistic Aspects An approximate method for determining the segregation coefficient of the boron drive diffusion in oxidizing ambients Dao Khac An, Dao Khac An Department of Physics and Technology of Semiconductor Devices, Institute of Physics, Academy of Sciences of Vietnam, Hanoi Search for more papers by this author Dao Khac An, Dao Khac An Department of Physics and Technology of Semiconductor Devices, Institute of Physics, Academy of Sciences of Vietnam, Hanoi Search for more papers by this author First published: 16 April 1984 https://doi.org/10.1002/pssa.2210820240Citations: 1 Nghia Do, Tu Liem, Hanoi, People's Republic of Vietnam. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume82, Issue216 April 1984Pages K145-K148 RelatedInformation
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