Abstract
The gases used in industrial cleaning processes are considered greenhouse gases with a high global warming potential (GWP). It is important to provide a viable alternative chemical vapor deposition (CVD) cleaning gas that is capable of removing efficiently deposited layers on the CVD chamber inner wall and other parts of the apparatus. The cleaning gas has to be environmental friendly in order to avoid accentuation of the global warming phenomena. Besides that, the alternative cleaning gas should be compatible with the existing gas delivery system and the CVD equipment that is already used by industrial companies. Only by fulfilling the three requirements mentioned above is it possible to replace the well-established cleaning gases. In this project, an F2–gas mixture for the in-situ cleaning of CVD chambers has been studied and compared with conventional cleaning methods. The conventional cleaning process is defined as a cleaning procedure using either C2F6 in RF plasma discharge or NF3 in remote plasma discharge.
Highlights
Semiconductor chip manufacturers use in their in-situ processes a variety of gases to pattern silicon wafers and to reach a rapid cleaning of chemical vapor deposition (CVD) tool chambers
Comparative Study of RF Plasma Cleaning Using C2 F6 and F2 –Gas Mixture. The purpose of this experiment is to compare the cleaning effect of F2 -gas mixture to the standard used cleaning process based on C2 F6 /O2 chemistry
According to the present study, we demonstrate that the F2 –gas mixture is an adequate candidate to be widely extended for cleaning CVD apparatus in conjunction with the existing hardware equipment
Summary
Semiconductor chip manufacturers use in their in-situ processes a variety of gases to pattern silicon wafers and to reach a rapid cleaning of chemical vapor deposition (CVD) tool chambers. To maintain a high throughput during the thin film deposition processes, it is essential to optimize the cleaning step in a way to remove perfectly the residual thin films deposited on the CVD chamber inner wall without generating any particles. Non-negligible amounts of unreacted fluorinated gases ranging between 10–80% are released into the atmosphere. They are considered as greenhouse gases with a high global warming potential [1]. The global warming potential (GWP) of a gas is generally measured in a 100-year time horizon and expressed in
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