Abstract

Growth of the ternary semiconductor Zn x CdS in MOR type zeolite matrices is reported. Hydrothermal synthesis was used for growing such semiconductor compound and analogues by using Cd and Zn salts as well as Thiourea as precursor sources of Cd, Zn and S elements, respectively. Following synthesis routes previously reported, bulk CdS with a band gap of 2.26 eV was obtained to be used as a reference. The final products were mainly characterized by Raman and Photoluminescence spectroscopies. The study shows the formation of Zn diluted ZnCdS ternary alloy in the final products of the synthesis, particularly for those samples with a Zn(wt%)/Cd(wt%) ratio higher than 0.05, and also the formation of a ZnO phase with a band gap value around 3.3 eV for the sample with the highest Zn content.

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