Abstract
This paper presents a method to pattern metal in deep holes. We do this by etching holes through a separate wafer to form a shadow mask and then depositing metal by electron-beam evaporation or sputtering through the holes on this shadow mask on to the device wafer. The integration of deep reactive ion etching (DIRE) and KOH wet etching micromachining techniques for the realization of shadow mask in this paper simplifies the fabrication process and provides high resolution.
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