Abstract
This communication describes a versatile apparatus for the production of thin polycrystalline metallic films under conditions of high purity. The apparatus includes facilities for film preparation by evaporation and cathodic sputtering and for ion bombardment of the films under the same conditions of purity as obtained during preparation. The films can also be annealed before and after ion bombardment, although at this stage of the programme these facilities have not been fully used. Electrical conductivity measurements of the films can be made in situ and some preliminary data on the effects of ion bombardment on the electrical conductivity of thin metallic films are reported.
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