Abstract
An anomalous photocurrent observed in reverse-biased SnO2-Si heterojunctions, obtained by spraying, is reported. This current becomes voltage independent above a certain reverse voltage value and is much larger than expected from the number of photopairs generated. The anomalous photocurrent occurs above a minimum voltage value and a minimum number of incident photons, these thresholds being constant for each cell. The anomalous photocurrent is generated under the SnO2 window, its density being larger under the window edge region.
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