An Angelov Large-Signal FET Model Up To 67 GHz

Abstract

A modified Angelov large-signal field effect transistor model is proposed in which dispersion branches are neglected. A systematic procedure is built up to directly extract all the key model parameters from hybrid measurements including dc and RF characteristics. Source-pull and load-pull iterations are conducted to verify the accuracy of large-signal performances. Owing to the effective parameter extraction and RF de-embedding, the modeled results show an excellent agreement with the measured ${I}$ – ${V}$ relations and multi-bias S-parameters up to 67 GHz. Output power and power added efficiency are sufficiently validated at 30 GHz.