Abstract
This paper describes an analytical technique for calculating high-field steady-state transport parameters in semiconductors using the first, second, and third moments of the Boltzmann transport equation. The transport parameters for each individual conduction valley are found by solving the moment equations and the valley population ratio is determined by equating the intervalley scattering rates. Instead of the usual drifted Maxwellian approximation, we represent the distribution function in terms of Hermite functions. This causes the moment equations to decouple, thereby making it simpler to evaluate the transport parameters analytically. Moreover, we account for the electron temperature anisotropy by using two different temperatures: one for the distribution parallel to the applied field and another for the transverse direction. This leads to better accuracy in the calculation of transport parameters as well as the valley population ratio.
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