Abstract
A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end,sp3-type hybrid orbitals are employed.
Highlights
SILICON CARBIDEScientific Consultants, C/Julio Palacios, 11, 9-B, 28029-Madrid, Spain (Received 27 January 1998; In finalform 15 April 1998)
Amorphous silicon carbide is a scarcely investigated material from both the theoretical and experimental points of view
One of the open questions upon this semiconductor in the amorphous phase is related to the electronic density of states
Summary
Scientific Consultants, C/Julio Palacios, 11, 9-B, 28029-Madrid, Spain (Received 27 January 1998; In finalform 15 April 1998). A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed. Keywords." Local valence band density of states; amorphous silicon carbide; hybrid orbitals
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