Abstract
In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented. This paper also presents a novel way of accurately modelling the lateral coupling in the substrate. The presented model can be applied to any foundry process, and its validity has been demonstrated using a novel technology, the D01GH GaN process developed by OMMIC, which has a high resistivity substrate. To do so, seventeen inductors have been designed and manufactured. The proposed model has been verified against EM simulations and measurements of the designed inductors. Comparisons show that the model can correctly estimate the behaviour of the inductor, improving the results of the EM simulations for most cases. The root mean square (RMS) error calculated across the samples when estimating the inductance is 0.0565. The RMS error for the quality factor results (2.2727) is also adequate, although there is more deviation when comparing the results with the measurements.
Highlights
Integrated inductors are a key component in RFIC and MMIC designs, since they have a significant impact on the size and performance of the overall system
It could be stated that this model could be utilised to estimate the inductance and quality factor of an inductor manufactured with the D01GH GaN process and, possibly, other processes, both with and without high-resistivity substrates
A comparison between the measurements of 17 manufactured inductors, their model and their EM simulations was carried out to determine the validity of the model
Summary
Integrated inductors are a key component in RFIC and MMIC designs, since they have a significant impact on the size and performance of the overall system. Several works found in the literature provide different models and techniques to model the behaviour of manufactured inductors [1]–[4]. The growing interest in GaN processes in the last years has increased the need for a model that can correctly predict the behaviour of an inductor layed out on a high-resistivity substrate. Numerous effects must be accounted for when modelling an inductor, especially a tapered one, such as DC inductance, skin effects, eddy currents and lateral coupling of the substrate. [12] deems lateral coupling as not significant or negligible on high-resistivity substrates, like the ones on GaN or GaAs processes. The model presented in this paper includes mathematical formulation for modelling lateral coupling and its impact on a high-resistivity substrate has been demonstrated.
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