Abstract
This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFET devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200°C. It is found that the device self-heating effect is suppressed when ambient temperature is increased. In addition, our results suggest that the conventional MOSFET breakdown model without considering the self-heating effect can overestimate the breakdown characteristics for the short-channel devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Solid State Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
