Abstract
In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
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