An Analytical Model to Evaluate Well-Potential Modulation and Bipolar Amplification Effects

Abstract

An analytical model to evaluate well potential modulation and the resulting bipolar amplification effects was proposed and integrated into circuit-level simulation approach in this paper. The key point was to produce equivalent resistance network and current source between N-well and P-well, so that well potential modulation at arbitrary points could be estimated. It was shown that the simulation results reflected the contribution of bipolar amplification effects and the influence of well contact placement. The simulated cross sections were consistent with those of heavy ion experimental data, highlighting the reasonableness of the proposed model.