Abstract
In this paper, Poisson's equation is utilized to find the potential distribution inside the channel of an independent gate FinFET device by adding the effect of channel height. The channel height of the device plays an important role in surface potential calculation when top gate voltage is applied. Using surface potential, an I - V model is developed, which can find the device current both in linear and saturation regions of operation. The model is tested on devices of different dimensions and good agreement between modeled and simulated results is observed, which validates the authenticity of the proposed model.
Highlights
FinFET is a promising new candidate for future technology due to its ability to control the channel of the device with relative ease compared to conventional FETs [1,2,3]
Single gate FinFETs are controlled by one gate electrode while multiple gate FinFETs (MG-FinFETs) are controlled by more than one gate acting on the device independently [4, 5]
To verify the validity of the proposed model, independent gate FinFETs of various dimensions were selected and their details are given in Table 1 [15, 18] and Table 2
Summary
FinFET is a promising new candidate for future technology due to its ability to control the channel of the device with relative ease compared to conventional FETs [1,2,3]. MG-FinFETs offer more flexibility in circuit design compared to single gate FinFETs. MG-FinFETs are employed to control the threshold voltage [6], conversion gain [7], and power management [8] in large nano circuitries. Using MG-FinFETs, the width quantization effect on large circuits, such as SRAMs, can be reduced [11, 12]. To fully comprehend the device behavior, models specific to independent gate FinFETs are needed. A DC model is presented for MG-FinFETs by considering a 3-D field distribution inside the channel. Poisson’s equation is solved to estimate the potential distribution inside the channel by taking into consideration the effect of channel height along with its length and width. A discussion is presented on the basis of the results obtained and conclusions associated with the study are summarized
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