Abstract
An analytical model of Triple RESURF device with linear P-layer doping profile is proposed in the paper. According to the analytical model and numerical simulation, the surface potential and electric field distributions of Single RESURF device, Double and Triple RESURF devices with linear-doped P-layer are investigated. The impacts of the P-layer doping profile on the breakdown voltage and specific on-resistance of Triple RESURF devices are discussed in detail, and the electric field modulation mechanism of the linear-doped P-layer is also described. In addition, the ideal P-layer doping profile, the maximum lateral breakdown voltage, and the optimal N-drift doping concentration are derived to guide the design of the Triple RESURF device. The analytical results are well supported by the simulation results, confirming the validity of the model presented here.
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