Abstract
An analytical model including the semiconducting substrate effect for ultra-thin-film SOI MOSFETs is presented. Analyses show that when the back grate is properly biased, the front gate threshold voltage as well as subthreshold swing are reduced. There are five operation regions according to various combinations of back gate silicon surface and substrate surface conditions identified. Result of back gate bias effect and its dependence on film thickness are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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