An Analytical Model of Single-Event Transients in Double-Gate MOSFET for Circuit Simulation

Abstract

In this paper, a physics-based bias-dependent model of single-event transients (SETs) in double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing approaches that use double exponential and dual double-exponential current sources to emulate these transient currents in the circuit simulators depend on the parameters extracted from TCAD device simulations. In order to capture the essential physics behind these current transients in the circuit simulations, there is a need for a physics-based bias-dependent SET current model that considers the electrostatics in the chosen device. The proposed SET current model is developed from the solution of 2-D Poisson’s equation with proper boundary conditions of DG MOSFET. It takes into account the dependence of the transient potential and drain current on linear energy transfer (LET), strike positions, drain and gate biases, device dimensions, and channel doping. The results from the model are validated with the simulation results from TCAD. The SET current model is integrated in Cadence circuit simulator and observed through simulations the voltage perturbation at the output of the CMOS inverter due to heavy ion strike on nMOS transistor in OFF state for different LETs and loads. The proposed model captures the current plateau region effect in CMOS inverter.