Abstract
Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, the behavior of DIBL(Drain Induced barrier lowering) effect is investigated for short channel 4H-SiC MESFETs. An analytical model of accurate threshold voltage shift model for the asymmetry short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, an analysis of threshold voltage for short channel device on the L/a(channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND is made, which provides a good basis for short channel device and circuit design.
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