Abstract
Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the key parameters in analysing the above-threshold characteristics. The expressions for the device transconductance and drain conductance are then developed, from which the channel resistance has also been extracted. The expressions so developed are simple and can be extensively used in modeling the short channel TFT. The predicted results are compared with available experimental data, and excellent matching confirms the validity of the model.
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