Abstract
In this paper, we have developed a physics-based analytical model for the electrical characteristics of passivated silicon carrier-selective contact (CSC) solar cells and validated it with numerical simulations. The model comprises analytical solutions of: 1) the Poisson equation, accurately capturing the level of inversion and accumulation at the crystalline silicon (c-Si) layer interfaces, and 2) the recombination current capturing the various recombination mechanisms at work in the solar cell. The calculations establish that CSC solar cells have the potential to achieve an efficiency greater than 26% even when both c-Si interfaces have realistic SRV values of 100 cm/s. The model helps illustrate the physics underlying the performance of CSC solar cells for variation in key device parameters such as surface recombination velocities, bulk lifetime, contact layer doping, and amorphous silicon (a-Si) thickness amongst others. By circumventing the need for resource-intensive numerical simulations, the analytical model described in this paper can assist in the design and development of high-performance CSC solar cells.
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